| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide, for example, a fin-type semiconductor device and a method of manufacturing the same. <P>SOLUTION: A multilayer structure 104 is formed so as to include a first layer 108 formed on a semiconductor substrate 102, a second layer 110 formed on the first layer, and a third layer 112 formed on the second layer. A plurality of fins 202 is formed on the semiconductor substrate, and a part of the multilayer structure 204 is formed on the fin, by removing an upper part of the semiconductor substrate and the multilayer structure. An isolation material 300 whose top surface is aligned with a top surface of the multilayer structure is formed between the fins 206. An upper part of the third layer and the isolation material are etched so that the second layer is exposed, and the second layer and a part of the remaining isolation material are etched so that the first layer is exposed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
