| 发明名称 |
Boost Cell Supply Write Assist |
| 摘要 |
A method of increasing a drain to source voltage measured at an access pass-gate to a SRAM circuit in a SRAM memory array, including increasing a low voltage from a low voltage source powering said SRAM circuit, and increasing a high voltage from a high voltage source powering the SRAM circuit.
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| 申请公布号 |
US2011280094(A1) |
申请公布日期 |
2011.11.17 |
| 申请号 |
US20100778223 |
申请日期 |
2010.05.12 |
| 申请人 |
HEYMANN OMER;BAR-NIV DANA;JUNGMANN NOAM;KACHIR ELAZAR;NIR UDI;PLOTKIN LIMOR;ROZENFELD AMIRA;WONG ROBERT C.;YANG HAINING S.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HEYMANN OMER;BAR-NIV DANA;JUNGMANN NOAM;KACHIR ELAZAR;NIR UDI;PLOTKIN LIMOR;ROZENFELD AMIRA;WONG ROBERT C.;YANG HAINING S. |
| 分类号 |
G11C5/14;G11C7/00 |
主分类号 |
G11C5/14 |
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