发明名称 |
SILICON CARBIDE SEMICONDUCTOR DEVICE |
摘要 |
A SiC semiconductor device capable of increasing a switching speed without destroying a gate insulating film. In addition, in a SiC-MOSFET including an n-type semiconductor substrate formed of SiC, a p-type semiconductor layer is entirely or partially provided on an upper surface of a p-type well layer that has a largest area of the transverse plane among a plurality of p-type well layers provided in an n-type drift layer and is arranged on an outermost periphery immediately below a gate electrode pad. It is preferable that a concentration of an impurity contained in the p-type semiconductor layer be larger than that of the p-type well layer.
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申请公布号 |
US2011278599(A1) |
申请公布日期 |
2011.11.17 |
申请号 |
US201013146812 |
申请日期 |
2010.02.23 |
申请人 |
NAKAO YUKIYASU;IMAIZUMI MASAYUKI;NAKATA SHUHEI;MIURA NARUHISA;MITSUBISHI ELECTRIC CORPORATION |
发明人 |
NAKAO YUKIYASU;IMAIZUMI MASAYUKI;NAKATA SHUHEI;MIURA NARUHISA |
分类号 |
H01L29/161 |
主分类号 |
H01L29/161 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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