发明名称 |
Semiconductor Devices Having Gates Including Oxidized Nickel and Related Methods of Fabricating the Same |
摘要 |
Schottky barrier semiconductor devices are provided including a wide bandgap semiconductor layer and a gate on the wide bandgap semiconductor layer. The gate includes a metal layer on the wide bandgap semiconductor layer including a nickel oxide (NiO) layer. Related methods of fabricating devices are also provided herein. |
申请公布号 |
US2011278590(A1) |
申请公布日期 |
2011.11.17 |
申请号 |
US20100778334 |
申请日期 |
2010.05.12 |
申请人 |
MIECZKOWSKI VAN;HAGLEITNER HELMUT;HABERERN KEVIN |
发明人 |
MIECZKOWSKI VAN;HAGLEITNER HELMUT;HABERERN KEVIN |
分类号 |
H01L29/778;H01L21/335;H01L21/338;H01L29/20;H01L29/24;H01L29/80 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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