发明名称 SCALING OF BIPOLAR TRANSISTORS
摘要 Bipolar transistor structures, methods of designing and fabricating bipolar transistors, methods of designing circuits having bipolar transistors. The method of designing the bipolar transistor includes: selecting an initial design of a bipolar transistor; scaling the initial design of the bipolar transistor to generate a scaled design of the bipolar transistor; determining if stress compensation of the scaled design of the bipolar transistor is required based on dimensions of an emitter of the bipolar transistor after the scaling; and if stress compensation of the scaled design of the bipolar transistor is required then adjusting a layout of a trench isolation layout level of the scaled design relative to a layout of an emitter layout level of the scaled design to generate a stress compensated scaled design of the bipolar transistor.
申请公布号 US2011278570(A1) 申请公布日期 2011.11.17
申请号 US201113195155 申请日期 2011.08.01
申请人 JOSEPH ALVIN JOSE;MALLADI RAMANA MURTY;SLINKMAN JAMES ALBERT;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 JOSEPH ALVIN JOSE;MALLADI RAMANA MURTY;SLINKMAN JAMES ALBERT
分类号 H01L29/732;H01L21/331 主分类号 H01L29/732
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