SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a semiconductor device which is provided with a first MIS transistor (Tr1), and a second MIS transistor (Tr2). The first MIS transistor is provided with: a first gate insulating film (15A), which is formed on a first active region (10a), and which has a first high-dielectric-constant insulating film (15a); and a first gate electrode (20A) formed on the first gate insulating film. The second MIS transistor is provided with: a second gate insulating film (15B), which is formed on a second active region (10b), and which has a second high-dielectric-constant insulating film (15b); and a second gate electrode (20B) formed on the second gate insulating film. Each of the first gate insulating film and the second gate insulating film includes a metal for adjustment. The first gate width (W1) of the first MIS transistor is smaller than the second gate width (W2) of the second MIS transistor. The average concentration of the metal for adjustment in the first gate insulating film is lower than that in the second gate insulating film.