SEMICONDUCTOR DEVICE, BONDED SUBSTRATE, AND MANUFACTURING METHODS THEREFOR

摘要

Disclosed is a low-cost, high-quality semiconductor device, a bonded substrate used in the manufacture of said semiconductor device, and manufacturing methods therefor. The disclosed method for manufacturing a semiconductor element comprises: a step (S10) in which a single-crystal semiconductor member is prepared; a step (S20) in which a support material is prepared; a step (S30) in which the support material and the single-crystal semiconductor member are bonded to each other using a carbon-containing bonding layer; a step (S40) in which an epitaxial layer is formed on the surface of the single-crystal semiconductor member; a step (S50) in which the epitaxial layer is used to form a semiconductor element; a step (S60), after the step (S50) in which the semiconductor element is formed, in which the bonding layer is broken down via oxidation and the single-crystal semiconductor member is separated from the support material; and a step (S80) in which the single-crystal semiconductor member separated from the support material is diced.