| 摘要 |
<P>PROBLEM TO BE SOLVED: To easily and surely obtain a thin film semiconductor at a low cost. <P>SOLUTION: A method is provided that comprises a step of forming a porous layer 12 having a plurality of layers with different porosity rates by applying anodization to the surface of a semiconductor substrate for a plurality of times. The method further comprises steps of forming an epitaxial semiconductor film on the porous layer 12, and peeling the epitaxial semiconductor film off from the semiconductor substrate at the porous layer 12. During the last process of the anodization C to D in forming the porous layer 12, intermittent energization is performed by repeatedly energizing and non-energizing the surface of the semiconductor substrate. <P>COPYRIGHT: (C)2012,JPO&INPIT |
