| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a light-emitting device capable of promoting external radiation without holding light in a layer having a large optical absorption coefficient. <P>SOLUTION: The method of manufacturing a light-emitting device comprises: a substrate preparation step of preparing a base substrate; a semiconductor layer formation step of forming a GaN-based semiconductor layer on the base substrate; a lift-off step of removing the base substrate from the GaN-based semiconductor layer; a rough surface forming step of roughening the surface of the GaN-based semiconductor layer, which is exposed by removing the base substrate, to form an uneven surface; and a translucent material layer formation step of directly attaching a translucent material layer to the uneven surface of the GaN-based semiconductor layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
