发明名称 EXPOSURE METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To uniformly form a pattern of a dimension corresponding to a design pattern dimension on an entire substrate surface. <P>SOLUTION: An exposure method includes a correction function creation step of creating an optical condition correction function, a correction amount calculation step of calculating a correction amount of lighting parameter, and an exposure step of exposing a first substrate. The correction function creation step creates the optical condition correction function that corrects a lighting parameter other than an exposure amount to be used in exposure processing onto the first substrate based on exposure coordinates within the first substrate surface on the basis of a substrate in-surface size distribution of a pattern formed on a second substrate. The correction amount calculation step calculates at least one correction amount of the lighting parameter for each exposure shot, using the optical condition correction function and the exposure coordinates of each exposure shot set on the first substrate. The exposure step exposes the first substrate while correcting the lighting parameter by the correction amount of the lighting parameter. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011233744(A) 申请公布日期 2011.11.17
申请号 JP20100103354 申请日期 2010.04.28
申请人 TOSHIBA CORP 发明人 FUKUHARA KAZUYA
分类号 H01L21/027 主分类号 H01L21/027
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