| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a silicon carbide semiconductor device, enabling adoption of a simple process and having a configuration of high overcurrent resistance. <P>SOLUTION: In a dot-shaped semiconductor region 5 at the center, whose contour portion is depicted with bold lines, a ring-shaped region depicted with the bold lines includes a current limit portion 5a (large depth portion) formed therein, with p-type impurity reaching a position deeper than the dot-shaped semiconductor region 5. The reach depth of the p-type impurity in the dot-shaped semiconductor region 5 is 0.2-0.4 μm. In contrast, the ring-shaped current limit portion 5a is set to have a depth of one-third the thickness of a semiconductor layer 1, which is a drift layer, or smaller. <P>COPYRIGHT: (C)2012,JPO&INPIT |
