发明名称 |
MEMORY DEVICE HAVING A LOCAL CURRENT SINK |
摘要 |
A memory device having a local current sink is disclosed. In a particular embodiment, an electronic device is disclosed. The electronic device includes one or more write drivers. The electronic device includes at least one Magnetic Tunnel Junction (MTJ) coupled to a bit line and coupled to a source line. The electronic device also includes a current sink circuit comprising a single transistor, the single transistor coupled to the bit line and to the source line. |
申请公布号 |
WO2011143221(A1) |
申请公布日期 |
2011.11.17 |
申请号 |
WO2011US35928 |
申请日期 |
2011.05.10 |
申请人 |
QUALCOMM INCORPORATED;KIM, JUNG PILL;RAO, HARI M. |
发明人 |
KIM, JUNG PILL;RAO, HARI M. |
分类号 |
G11C11/16;G11C13/00;G11C29/02 |
主分类号 |
G11C11/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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