发明名称 MEMORY DEVICE HAVING A LOCAL CURRENT SINK
摘要 A memory device having a local current sink is disclosed. In a particular embodiment, an electronic device is disclosed. The electronic device includes one or more write drivers. The electronic device includes at least one Magnetic Tunnel Junction (MTJ) coupled to a bit line and coupled to a source line. The electronic device also includes a current sink circuit comprising a single transistor, the single transistor coupled to the bit line and to the source line.
申请公布号 WO2011143221(A1) 申请公布日期 2011.11.17
申请号 WO2011US35928 申请日期 2011.05.10
申请人 QUALCOMM INCORPORATED;KIM, JUNG PILL;RAO, HARI M. 发明人 KIM, JUNG PILL;RAO, HARI M.
分类号 G11C11/16;G11C13/00;G11C29/02 主分类号 G11C11/16
代理机构 代理人
主权项
地址