发明名称 PROBE CARD AND METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 Provided is a probe card for LSI inspection that can achieve electrical conduction to electrodes on an LSI with a low load without damaging the electrodes and a structural body therebelow, even if the electrodes are arranged at a narrow pitch and in a complex manner. A contact terminal is formed in a truncated square pyramidal recess provided on a film-shaped probe. A dent is often formed on a surface of the film-shaped probe just above the contact terminal. A resin coating film is formed so as to eliminate the dent and flatten the surface of the film-shaped probe. At this time, it is preferred that an amount of cure shrinkage of a resin paste for forming the resin coating film is 0.1% or less.
申请公布号 US2011281380(A1) 申请公布日期 2011.11.17
申请号 US201113107317 申请日期 2011.05.13
申请人 NARIZUKA YASUNORI;TAKANE ETSUKO;HASEBE AKIO;RENESAS ELECTRONICS CORPORATION 发明人 NARIZUKA YASUNORI;TAKANE ETSUKO;HASEBE AKIO
分类号 H01L21/66;G01R31/00 主分类号 H01L21/66
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