| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate manufacturing method and a substrate, capable of suppressing a split substrate from the origin of a scratch or a crack on the rear face, when performing high-temperature and short-time heat treatment, such as flash lamp annealing, on the substrate. <P>SOLUTION: In one embodiment, the substrate manufacturing method includes: a first step for forming a film 13 on which a compressive stress is loaded, on a rear face 12 of a semiconductor wafer 10; and a second step for performing a high-temperature and short-time heat treatment to only a front surface 11 of the semiconductor wafer 10 by irradiating the surface 11 with a flash. <P>COPYRIGHT: (C)2012,JPO&INPIT |
