| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a copper wiring pattern, which can easily form the copper wiring pattern having a satisfactory cross-sectional shape. <P>SOLUTION: The method for forming a copper wiring pattern (4), which uses an etching liquid containing a cupric ion source, acid, a side etching inhibitor and water, includes: a first etching step of etching an article to be etched with the etching liquid so that an etching amount (T<SB POS="POST">1</SB>) in a depth direction becomes 50-90% of a copper thickness (T<SB POS="POST">0</SB>) at the start of etching; and a second etching step of etching the article to be etched subsequently after the first etching step until the end of the etching process with the etching liquid. When an etching rate in the first etching step is R1 and an etching rate in the second etching step is R2, a value of R2/R1 is 0.40-0.85. <P>COPYRIGHT: (C)2012,JPO&INPIT |
