| 摘要 |
A method of manufacturing a thin film transistor (TFT) and a method of manufacturing a flat panel display (FPD) using the same. A metal layer made out of Mo having no etch selectivity with a semiconductor layer so that a source electrode, a drain electrode, and an activation layer may be produced using a single mask in a single etch step. The metal layer and the semiconductor layer are simultaneously etched to form the source electrode, the drain electrode, and the activation layer, of a same width so that the area occupied by the TFT may be minimized. When the TFT is applied to the FPD, the maximal aperture ratio of pixels may be obtained and the FPD may be manufactured using only four masks. |
