发明名称 HIGH BRIGHTNESS MICRO-ARRAY LIGHT-EMITTING DIODES
摘要 PURPOSE: A high brightness micro array light emitting diode device is provided to maximize light extraction efficiency by optimizing the size, interval, etching angle, and etching depth of a unit device. CONSTITUTION: A plurality of triangular micro arrays is located on a substrate. The outer diameter(120) of the micro array is 7 to 9 um. An interval(130) between the micro arrays is 3 um. The etching depth(140) of the micro array is 2.5 to 3.5 um. The etching angle(150) of the micro array is 60 degrees.
申请公布号 KR20110124545(A) 申请公布日期 2011.11.17
申请号 KR20100043997 申请日期 2010.05.11
申请人 INDUSTRY-ACADEMIA COOPERATION GROUP OF SEJONG UNIVERSITY 发明人 KIM, JONG RYEOL
分类号 H01L33/08 主分类号 H01L33/08
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