METHOD OF REMOVING METAL RESIDUE USING GAS PHASE CLEANING, METHOD OF FORMING A CONDUCTIVE LAYER PATTERN, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND RELATED EQUIPMENT

摘要

PURPOSE: A method for removing metal residue using vapor cleaning, a method for forming a conductive film pattern, and a method and equipment for manufacturing a semiconductor device are provided to selectively remove metal contained residue and suppress damage to conductive patterns. CONSTITUTION: An under layer(12) and a conductive layer are successively formed on a substrate. A mask pattern is formed on the conductive layer. A conductive pattern is formed by etching a part of the conductive layer exposed by the mask pattern. The residue is removed by supplying cleaning gas to the under layer. The cleaning gas includes an element which generates volatile metal compound by reacting with the metal oxide or metal included in the residue.