发明名称 METHOD AND DEVICE FOR PROCESSING WAFER
摘要 <P>PROBLEM TO BE SOLVED: To prevent deterioration of throughput when removing a reinforcing portion from a wafer, to restrain the increase of facility cost, and to prevent reduction of the number of chips produced per wafer. <P>SOLUTION: A device for processing wafer includes: a laser-processing stage 2 holding and rotating the wafer in such a state that the wafer is vertical or inclines at an optional angle; a laser head 3 for irradiating, with laser from a fixed position the boundary between the element area of the wafer held by the laser-processing stage 2 and the reinforcing portion thicker than the element area, or a region inside the boundary; a gas jetting portion 4 for blowing a gas to a laser-irradiated portion in a direction reverse to the rotation of the wafer and toward the outside thereof obliquely from upside; and a taping device 10 for applying to the wafer after laser irradiation, a tape for protecting the wafer when dicing. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011230153(A) 申请公布日期 2011.11.17
申请号 JP20100102627 申请日期 2010.04.27
申请人 FUJI ELECTRIC CO LTD 发明人 SAWANO MITSUTOSHI
分类号 B23K26/38;B23K26/08;B23K26/10;B23K26/14;B23K26/40;H01L21/301;H01L21/683 主分类号 B23K26/38
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