| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing potential variation of a body region caused by potential variation of a power supply wiring. <P>SOLUTION: On a top face of a silicon layer 4, an element isolation insulating film 5 of a partial trench type is selectively formed. A power supply wiring 21 is formed over the element isolation insulating film 5. The element isolation insulating film 5 includes a completely separated part 23 reaching a top surface of an insulating layer 3 under the power supply wiring 21. In other words, the semiconductor device includes the element isolation insulating film of a completely separated type, which is formed so as to reach from the top surface of the silicon layer 4 to the top surface of the insulating layer 3, under the power supply wiring 21. <P>COPYRIGHT: (C)2012,JPO&INPIT |
