| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory element capable of performing operations such as recording of information in a stable manner while having a stable configuration also for heat. <P>SOLUTION: There is provided a memory element 10 configured to sandwich a memory layer 4 and an ion source layer 3 between a first electrode 2 and a second electrode 6. The ion source layer 3 contains any metal element selected from Cu, Ag and Zn, and any element selected from Te, S and Se. The memory layer 4 is composed of any of tantalum oxide, niobium oxide, aluminum oxide, hafnium oxide and zirconium oxide, or the mixed materials thereof. When a positive voltage is applied to the first electrode 2 on the side of the ion source layer 3, and a negative voltage is applied to the second electrode 6 on the side of the memory layer 4, an ionized metal element is moved into the memory layer 4 to form a current path, thereby reducing a resistance value of the memory layer 4. <P>COPYRIGHT: (C)2012,JPO&INPIT |
