COPPER ALLOY FOR ELECTRONIC DEVICE, METHOD FOR PRODUCING COPPER ALLOY FOR ELECTRONIC DEVICE, AND COPPER ALLOY ROLLED MATERIAL FOR ELECTRONIC DEVICE

摘要

Disclosed is a copper alloy for an electronic device, one embodiment of which is a two-element alloy of Cu and Mg containing Mg in a range of 3.3- 6.9 atomic percent with the remainder being only Cu and inevitable impurities. Letting the Mg content be A atomic percent, the electric conductivity s (%IACS) is within the following range. s = {1.7241/(-0.0347 × A2 + 0.6569 × A + 1.7)} × 100 Another embodiment of the this copper alloy for an electronic device is formed from a three-element alloy containing Mg in a range of 3.3 - 6.9 atomic percent and Zn in a range of 0.1 - 10 atomic percent, with the remainder being only copper and inevitable impurities. Letting the Mg content be A atomic percent and the Zn content be B atomic percent, the electric conductivity s (%IACS) is within the following range. s ={1.7241/(X + Y + 1.7)} × 100 X = -0.0347 × A2 + 0.6569 × A Y = -0.0041 × B2 + 0.2503 × B