发明名称 |
METHOD FOR MANUFACTURING SOI WAFER |
摘要 |
A method for manufacturing an SOI wafer including implanting a gas ion into a bond wafer from a surface thereof to form an ion-implanted layer; bonding the ion-implanted surface of the bond wafer to a surface of a base wafer through an insulator film; and delaminating the bond wafer at the ion-implanted layer to manufacture the SOI wafer. The method further includes immersing the bonded wafer prior to the delamination of the bond wafer at the ion-implanted layer into a liquid capable of dissolving the insulator film or exposing the bonded wafer to a gas capable of dissolving the insulator film so that the insulator film located between the bond wafer and the base wafer is etched from an outer circumferential edge toward a center of the bonded wafer. |
申请公布号 |
US2011281420(A1) |
申请公布日期 |
2011.11.17 |
申请号 |
US201013145275 |
申请日期 |
2010.01.08 |
申请人 |
AGA HIROJI;YOKOKAWA ISAO;NOTO NOBUHIKO;SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
AGA HIROJI;YOKOKAWA ISAO;NOTO NOBUHIKO |
分类号 |
H01L21/301 |
主分类号 |
H01L21/301 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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