发明名称 |
AFFECTING THE THERMOELECTRIC FIGURE OF MERIT (ZT) BY HIGH PRESSURE, HIGH TEMPERATURE SINTERING |
摘要 |
<p>A method for increasing the ZT of a semiconductor, involves creating a reaction cell including a semiconductor in a pressure-transmitting medium, exposing the reaction cell to elevated pressure and elevated temperature for a time sufficient to increase the ZT of the semiconductor, and recovering the semiconductor with an increased ZT.</p> |
申请公布号 |
EP2386126(A1) |
申请公布日期 |
2011.11.16 |
申请号 |
EP20090789417 |
申请日期 |
2009.01.09 |
申请人 |
DIAMOND INNOVATIONS, INC. |
发明人 |
MALIK, ABDS-SAMI;DONG, YONGKWAN;DISALVO, FRANCIS, J. |
分类号 |
H01L35/34;B01J3/06 |
主分类号 |
H01L35/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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