发明名称 AFFECTING THE THERMOELECTRIC FIGURE OF MERIT (ZT) BY HIGH PRESSURE, HIGH TEMPERATURE SINTERING
摘要 <p>A method for increasing the ZT of a semiconductor, involves creating a reaction cell including a semiconductor in a pressure-transmitting medium, exposing the reaction cell to elevated pressure and elevated temperature for a time sufficient to increase the ZT of the semiconductor, and recovering the semiconductor with an increased ZT.</p>
申请公布号 EP2386126(A1) 申请公布日期 2011.11.16
申请号 EP20090789417 申请日期 2009.01.09
申请人 DIAMOND INNOVATIONS, INC. 发明人 MALIK, ABDS-SAMI;DONG, YONGKWAN;DISALVO, FRANCIS, J.
分类号 H01L35/34;B01J3/06 主分类号 H01L35/34
代理机构 代理人
主权项
地址