发明名称 |
STRUCTURE AND METHOD FOR III-NITRIDE DEVICE ISOLATION |
摘要 |
<p>Isolation of III-nitride devices may be performed with a dopant selective etch that provides a smooth profile with little crystal damage in comparison to previously used isolation techniques. The dopant selective etch may be an electro-chemical or photo-electro-chemical etch. The desired isolation area may be identified by changing the conductivity type of the semiconductor material to be etched. The etch process can remove a conductive layer to isolate a device atop the conductive layer. The etch process can be self stopping, where the process automatically terminates when the selectively doped semiconductor material is removed.</p> |
申请公布号 |
EP1690285(A4) |
申请公布日期 |
2011.11.16 |
申请号 |
EP20040817943 |
申请日期 |
2004.12.06 |
申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
BRIDGER, PAUL |
分类号 |
H01L21/20;H01L;H01L21/76;H01L21/762;H01L21/764;H01L29/00 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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