Semiconductor device with a peripheral base region

摘要

The present invention relates to a semiconductor device and has an object to enhance a di / dt tolerance and a dV / dt tolerance without increasing an ON resistance.
In order to achieve the object described above, the semiconductor device has a peripheral base region (21) formed in a drain layer (3) of opposite conductivity type. Said peripheral base region may be coupled to one end of regions of a main base region (4).