HIGH CONTRAST ORGANIC LIGHT-EMITTING DIODES HAVING TRANSPARENT SEMICONDUCTOR LAYERS

摘要

PURPOSE: An organic light-emitting diode having an optical transmission semiconductor film layer is provided to offer a low work function by constituting a double sided metal thin film layer with aluminum. CONSTITUTION: A light interference reflection protecting thin film has an optical transmission semiconductor film layer. The optical transmission semiconductor film layer is composed of zinc selenide. The optical interference anti-reflection thin film is composed of a tranflective metal thin film layer and a metal thin film layer. The tranflective metal thin film layer and the metal thin film layer are composed of aluminum. The thickness of the metal thin film layer is 1000Å. The thickness of the tranflective metal thin film layer is 70Å. The thickness of the optical transmission semiconductor film layer is 300Å.