NON-VOLATILE MEMORY DEVICE AND OPERATION METHOD OF THE SAME

摘要

PURPOSE: A non-volatile memory device and a method thereof are provided to increase the reliability of the non-volatile memory device by processing a block over the number of an erase operation as a bad block. CONSTITUTION: In a non-volatile memory device and a method thereof, erase sensors(111,121) are arranged at memory blocks(110,120). The erase sensors generate a detection signal. The detection signal is activated whenever an erase operation of a corresponding memory block is performed. If the number of activation of the detection signal is over a reference value, a controller(130) processes the corresponding memory block as a bad block. The erase sensor uses the voltage level of a word line in the memory block and the voltage level applied to the well area.