SPIN TRANSISTOR USING DOUBLE CARRIER SUPPLY LAYER STRUCTURE

摘要

PURPOSE: A spin transistor using a dual charge supply layer structure is provided to efficiently control the precession of a spin injected to a channel layer by increasing the potential gradient of a channel. CONSTITUTION: A top cladding layer(2') and a bottom cladding layer(2) are formed with a dual cladding layer composed of an undoped InGaAs layer and an InAlAs layer. A second charge supply layer(4') is arranged on the top cladding layer. An InAs channel layer(1) forms a quantum well by an energy barrier of the top cladding layer and the bottom cladding layer. A buffer layer(5) reduces lattice mismatch between a semi-insulation InP substrate(9) and a first charge supply layer(4). An InAs capping layer(8) prevents the oxidation and denaturalization of a semiconductor.