Photon Detecting Semiconductor Sensor Structure Based on Termination Technique using Resistive Poly-Silicon Layer,申请号KR20090116234-传众专利搜索

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发明名称	Photon Detecting Semiconductor Sensor Structure Based on Termination Technique using Resistive Poly-Silicon Layer
摘要
申请公布号	KR101084110(B1)	申请公布日期	2011.11.16
申请号	KR20090116234	申请日期	2009.11.27
申请人		发明人
分类号	H01L21/265	主分类号	H01L21/265
代理机构		代理人
主权项
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