SCHOTTKY BARRIER DIODE AND METHOD FOR MANUFACTURING THE SAME

摘要

A Schottky barrier diode includes an epitaxial growth layer disposed on a substrate and having a mesa portion, and a Schottky electrode disposed on the mesa portion, wherein a distance between an edge of the Schottky electrode and a top surface edge of the mesa portion is 2 µm or less. Since the distance x is 2 µm or less, a leakage current is significantly decreased, a breakdown voltage is improved, and a Schottky barrier diode having excellent reverse breakdown voltage characteristics is provide.