发明名称 |
MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT FORMED OVER A BOTTOM CONDUCTOR AND METHODS OF FORMING THE SAME |
摘要 |
In some aspects, a method of fabricating a memory cell is provided that includes (1) fabricating a first conductor above a substrate; (2) selectively fabricating a carbon nano-tube (CNT) material above the first conductor; (3) fabricating a diode above the CNT material; and (4) fabricating a second conductor above the diode. Numerous other aspects are provided. |
申请公布号 |
EP2227827(A4) |
申请公布日期 |
2011.11.16 |
申请号 |
EP20080869246 |
申请日期 |
2008.12.30 |
申请人 |
SANDISK 3D LLC |
发明人 |
SCHRICKER, APRIL;CLARK, MARK;HERNER, BRAD |
分类号 |
H01L27/115;G11C13/02;H01L21/8247;H01L45/00;H01L51/05 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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