发明名称 Method to direct pattern metals on a substrate
摘要 <p>A microscopic metallic structure is produced by creating or exposing a patterned region of increased conductivity and then forming a conductor on the region using electrodeposition. In some embodiments, a microscopic metallic structure is formed on a substrate, and then the substrate is etched to remove the structure from the substrate. In some embodiments, a focused beam of gallium ion without a deposition precursor gas scans a pattern on a silicon substrate, to produce a conductive pattern on which a copper structure is then formed by electrochemical deposition of one or more metals. The structure can be freed from the substrate by etching, or can used in place. A beam can be used to access an active layer of a transistor, and then a conductor can be electrodeposited to provide a lead for sensing or modifying the transistor operation while it is functioning. </p>
申请公布号 EP2151854(A3) 申请公布日期 2011.11.16
申请号 EP20090167311 申请日期 2009.08.06
申请人 FEI COMPANY 发明人 HOLTERMANN, THERESA;GRAUPERA, ANTHONY;DIBATTISTA, MICHAEL
分类号 H01L21/288;H01L21/66 主分类号 H01L21/288
代理机构 代理人
主权项
地址
您可能感兴趣的专利