发明名称 FLASH MEMORY OVERWRITING METHOD AND APPARATUS
摘要 PURPOSE: A flash memory overwriting apparatus and a method thereof are provided to delete a corresponding sector of a second flash chip during a writing task for a specific block. CONSTITUTION: A first flash chip(110) is composed of a plurality of sectors. Each sector means a flash chip. The flash chip is made of a plurality of blocks. A second flash chip(120) is composed of a plurality of sectors. The flash chip is composed of a plurality of blocks. A control unit(130) performs writing task to a specific block of a specific sector on the first flash chip. The control unit selectively deletes a specific sector of a second flash chip during the writing task.
申请公布号 KR101083054(B1) 申请公布日期 2011.11.16
申请号 KR20100048105 申请日期 2010.05.24
申请人 LIG NEX1 CO., LTD. 发明人 SHIN, JU CHUL
分类号 G06F12/02;G06F9/06;G06F12/06;G06F12/08 主分类号 G06F12/02
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