| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor ingot which is prevented from cracking when it is processed or the like. <P>SOLUTION: This method for producing the semiconductor ingot comprises unidirectionally solidifying a semiconductor melt in a casting mold 5, and has an annealing process for annealing only the solidification starting end part of the solidified body obtained by the unidirectional solidification. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
