发明名称 |
Methods and apparatus for producing semiconductor on insulator structures using directed exfoliation |
摘要 |
Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y-axial directions. |
申请公布号 |
US8058148(B2) |
申请公布日期 |
2011.11.15 |
申请号 |
US20100779606 |
申请日期 |
2010.05.13 |
申请人 |
CHEREKDJIAN SARKO;CITES JEFFREY SCOTT;COUILLARD JAMES GREGORY;MASCHMEYER RICHARD ORR;MOORE MICHAEL JOHN;USENKO ALEX;CORNING INCORPORATED |
发明人 |
CHEREKDJIAN SARKO;CITES JEFFREY SCOTT;COUILLARD JAMES GREGORY;MASCHMEYER RICHARD ORR;MOORE MICHAEL JOHN;USENKO ALEX |
分类号 |
H01L21/30 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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