发明名称 Method and apparatus for a process, voltage, and temperature variation tolerant semiconductor device
摘要 A method and apparatus to reduce the degradation in performance of semiconductor-based devices due to process, voltage, and temperature (PVT) and/or other causes of variation. Adaptive feedback mechanisms are employed to sense and correct performance degradation, while simultaneously facilitating configurability within integrated circuits (ICs) such as programmable logic devices (PLDs). A voltage-feedback mechanism is employed to detect PVT variation and mirrored current references are adaptively adjusted to track and substantially eliminate the PVT variation. More than one voltage-feedback mechanism may instead be utilized to detect PVT-based variations within a differential device, whereby a first voltage-feedback mechanism is utilized to detect common-mode voltage variation and a second voltage-feedback mechanism produces mirrored reference currents to substantially remove the common-mode voltage variation and facilitate symmetrical operation of the differential device.
申请公布号 US8058924(B1) 申请公布日期 2011.11.15
申请号 US20090361804 申请日期 2009.01.29
申请人 REN GUO JUN;RAU PRASAD;TAN JIAN;ZHANG QI;XILINX, INC. 发明人 REN GUO JUN;RAU PRASAD;TAN JIAN;ZHANG QI
分类号 G05F1/10;G05F3/02 主分类号 G05F1/10
代理机构 代理人
主权项
地址