发明名称 Piezoelectric thin film element
摘要 A piezoelectric thin film element includes a bottom electrode, a piezoelectric layer and a top electrode on a substrate. The piezoelectric layer includes as a main phase a perovskite-type oxide represented by (NaxKyLiz)NbO3 (0≦̸x≦̸1, 0≦̸y≦̸1, 0≦̸z≦̸0.2, x+y+z=1), and the bottom electrode includes a surface roughness of not more than 0.86 nm in arithmetic mean roughness Ra or not more than 1.1 nm in root mean square roughness Rms.
申请公布号 US8058779(B2) 申请公布日期 2011.11.15
申请号 US20090588484 申请日期 2009.10.16
申请人 SUENAGA KAZUFUMI;SHIBATA KENJI;OKA FUMIHITO;SATO HIDEKI;HITACHI CABLE, LTD. 发明人 SUENAGA KAZUFUMI;SHIBATA KENJI;OKA FUMIHITO;SATO HIDEKI
分类号 H01L41/187 主分类号 H01L41/187
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