发明名称 Method for manufacturing flexible semiconductor device
摘要 It is an object of one embodiment of the preset invention to conduct separation without damaging a semiconductor element when the semiconductor element is made flexible. Further, it is another object of one embodiment of the preset invention to provide a technique for weakening adhesion between a separation layer and a buffer layer. Furthermore, it is another object of one embodiment of the preset invention to provide a technique for preventing generation of the bending stress on a semiconductor element due to separation. A semiconductor element formed over a separation layer with a buffer layer interposed therebetween is separated by dissolving the separation layer by using an etchant. Alternatively, separation is conducted by inserting a film into a region where a separation layer is dissolved by being in contact with an etchant and moving the film in a direction toward a region where the separation layer is not dissolved.
申请公布号 US8058083(B2) 申请公布日期 2011.11.15
申请号 US20090619776 申请日期 2009.11.17
申请人 EGUCHI SHINGO;OIKAWA YOSHIAKI;KATAYAMA MASAHIRO;NAKAMURA AMI;MONMA YOHEI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 EGUCHI SHINGO;OIKAWA YOSHIAKI;KATAYAMA MASAHIRO;NAKAMURA AMI;MONMA YOHEI
分类号 H01L21/00 主分类号 H01L21/00
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