发明名称 |
Formation of metal gate electrode using rare earth alloy incorporated into mid gap metal |
摘要 |
Semiconductor devices and fabrication methods are provided, in which metal transistor gates are provided for MOS transistors. A rare earth-rare earth alloy incorporated metal nitride layer is formed above a gate dielectric. This process provides adjustment of the gate electrode work function, thereby tuning the threshold voltage of the resulting NMOS transistors. |
申请公布号 |
US8058122(B2) |
申请公布日期 |
2011.11.15 |
申请号 |
US20080206324 |
申请日期 |
2008.09.08 |
申请人 |
NIIMI HIROAKI;QUEVEDO-LOPEZ MANUEL ANGEL;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
NIIMI HIROAKI;QUEVEDO-LOPEZ MANUEL ANGEL |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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