发明名称 |
Method for recovering damage of low dielectric insulating film for manufacturing semiconductor device |
摘要 |
There is provided a damage recovery method capable of recovering electrical characteristics of a low dielectric insulating film sufficiently while suppressing oxidation of buried metal and generation of pattern defaults. A damaged functional group generated in a surface of the low dielectric insulating film by a processing is substituted with a hydrophobic functional group (ST. 2). A damaged component present under a dense layer generated in the surface of the low dielectric insulating film by the substitution process is recovered by using an ultraviolet heating process (ST. 3). |
申请公布号 |
US8058153(B2) |
申请公布日期 |
2011.11.15 |
申请号 |
US20080137827 |
申请日期 |
2008.06.12 |
申请人 |
ASAKO RYUICHI;OHSAWA YUSUKE;TOKYO ELECTRON LIMITED |
发明人 |
ASAKO RYUICHI;OHSAWA YUSUKE |
分类号 |
H01L21/322 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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