SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

摘要

PURPOSE: A semiconductor apparatus and a manufacturing method thereof are provided to include a gate insulating layer including a thermal oxide film which directly touches a silicon channel, thereby improving HCI(Hot Carrier Injection) properties. CONSTITUTION: A substrate(110) comprises a first region and second region respectively including an n-type region and p-type region. The n-type region of the first region includes a silicon channel(116). A silicon-germanium channel(116SG) is included in the p-type region of the first region. Each of the n-type and p-type regions of the second region includes the silicon channel. A first gate insulating film pattern(118a) which is a thermal oxide film is arranged on the substrate surface of the second region.