发明名称 |
VORRICHTUNG ZUM ABTRENNEN EINER SCHICHT VON EINEM SUBSTRAT UND VERFAHREN DAFÜR |
摘要 |
<p>A method is presented for cutting an assembly that includes two layers of material having a first surface and a second surface. The method includes providing a weakened interface between the two layers that defines an interface ring about the periphery of the assembly, providing a high-pressure zone at the interface ring, and providing at least one controllable low-pressure zone in the vicinity of at least one of the first surface and the second surface. The technique also includes supplying the high-pressure zone with a controllable high-pressure force, and attacking the interface ring with at least one mechanical force in combination with the high-pressure force to cut the assembly.</p> |
申请公布号 |
AT530312(T) |
申请公布日期 |
2011.11.15 |
申请号 |
AT20020799856T |
申请日期 |
2002.12.31 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
RAYSSAC, OLIVIER;LETERTRE, FABRICE |
分类号 |
B28D5/00;B28D5/04;H01L21/20;H01L21/762 |
主分类号 |
B28D5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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