发明名称 VORRICHTUNG ZUM ABTRENNEN EINER SCHICHT VON EINEM SUBSTRAT UND VERFAHREN DAFÜR
摘要 <p>A method is presented for cutting an assembly that includes two layers of material having a first surface and a second surface. The method includes providing a weakened interface between the two layers that defines an interface ring about the periphery of the assembly, providing a high-pressure zone at the interface ring, and providing at least one controllable low-pressure zone in the vicinity of at least one of the first surface and the second surface. The technique also includes supplying the high-pressure zone with a controllable high-pressure force, and attacking the interface ring with at least one mechanical force in combination with the high-pressure force to cut the assembly.</p>
申请公布号 AT530312(T) 申请公布日期 2011.11.15
申请号 AT20020799856T 申请日期 2002.12.31
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 RAYSSAC, OLIVIER;LETERTRE, FABRICE
分类号 B28D5/00;B28D5/04;H01L21/20;H01L21/762 主分类号 B28D5/00
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