发明名称 |
TRANSISTOREN AUF NIRTRIDBASIS MIT SEITLICH AUFGEWACHSENER AKTIVREGION UND HERSTELLUNGSVERFAHREN DAFÜR |
摘要 |
<p>High electron mobility transistors and/or methods of fabricating high electron mobility transistors that include a first Group III-nitride layer having vertically grown regions, laterally grown regions and a coalescence region are provided. A Group III-nitride channel layer is provided on the first Group III-nitride layer and a Group III-nitride barrier layer is provided on the Group III-nitride channel layer. A drain contact, a source contact and a gate contact are provided on the barrier layer. The gate contact is disposed on a portion of the barrier layer on a laterally grown region of the first Group III-nitride layer and at least a portion of one of the source contact and/or the drain contact is disposed on a portion of the barrier layer on a vertically grown region of the first Group III-nitride layer.</p> |
申请公布号 |
AT531081(T) |
申请公布日期 |
2011.11.15 |
申请号 |
AT20050730396T |
申请日期 |
2005.03.30 |
申请人 |
CREE, INC. |
发明人 |
SAXLER, ADAM;SHEPPARD, SCOTT;SMITH, RICHARD |
分类号 |
H01L29/778;H01L21/20;H01L21/335;H01L29/20 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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