发明名称 Flash memory array with independently erasable sectors
摘要 In one embodiment, an integrated circuit includes a flash memory array with at least first and second subarrays, or sectors, of memory cells. The subarrays have a set of shared bitlines and separate sets of word lines. A bitline driver circuit is coupled to the set of shared bitlines, a first row driver circuit is coupled to the set of word lines of the first subarray, and a second row driver circuit is coupled to the set of word lines of the second subarray. The first and second row driver circuits are operable to enable the memory cells of the first subarray to be erased independently of the memory cells of the second subarray. The two row driver circuits are further operable to enable the memory cells of the second subarray to be erased independently of the memory cells of the first subarray.
申请公布号 US8059470(B1) 申请公布日期 2011.11.15
申请号 US20090611262 申请日期 2009.11.03
申请人 MCLAURY LOREN;RUTLEDGE DAVID LEE;LATTICE SEMICONDUCTOR CORPORATION 发明人 MCLAURY LOREN;RUTLEDGE DAVID LEE
分类号 G11C11/34 主分类号 G11C11/34
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