发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
A semiconductor device according to the present invention includes: a semiconductor layer made of silicon; a trench formed by digging in from a top surface of the semiconductor layer; a gate insulating film formed on an inner wall surface of the trench and made of silicon oxide; a gate electrode embedded in the trench via the gate insulating film and made of a polysilicon doped with an impurity; and an oxidation-resistant metal film disposed on a top surface of the gate electrode and covering the top surface. |
申请公布号 |
US8058684(B2) |
申请公布日期 |
2011.11.15 |
申请号 |
US20080232221 |
申请日期 |
2008.09.12 |
申请人 |
NAKAO YUICHI;ROHM CO., LTD. |
发明人 |
NAKAO YUICHI |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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