发明名称 Microelectronic device
摘要 A thin film transistor is manufactured by a process including forming an oxide semiconductor channel, patterning the oxide semiconductor channel with a photolithographic process, and exposing the patterned oxide semiconductor channel to an oxygen containing plasma.
申请公布号 US8058096(B2) 申请公布日期 2011.11.15
申请号 US20070888055 申请日期 2007.07.31
申请人 HERMAN GREGORY;HOFFMAN RANDY;YAMASHITA TSUYOSHI;SMITH J. DANIEL;HEWLETT PACKARD DEVELOPMENT COMPANY, L.P. 发明人 HERMAN GREGORY;HOFFMAN RANDY;YAMASHITA TSUYOSHI;SMITH J. DANIEL
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
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