A thin film transistor is manufactured by a process including forming an oxide semiconductor channel, patterning the oxide semiconductor channel with a photolithographic process, and exposing the patterned oxide semiconductor channel to an oxygen containing plasma.
申请公布号
US8058096(B2)
申请公布日期
2011.11.15
申请号
US20070888055
申请日期
2007.07.31
申请人
HERMAN GREGORY;HOFFMAN RANDY;YAMASHITA TSUYOSHI;SMITH J. DANIEL;HEWLETT PACKARD DEVELOPMENT COMPANY, L.P.
发明人
HERMAN GREGORY;HOFFMAN RANDY;YAMASHITA TSUYOSHI;SMITH J. DANIEL