发明名称 |
ESD clamp for high voltage operation |
摘要 |
An electrostatic discharge (ESD) clamp includes a first power source configured to provide a first power supply voltage, a power supply node coupled to the first power source and receiving the power supply voltage; and a first NMOS transistor and a second NMOS transistor coupled in series and between the power supply node and a VSS node. The first NMOS transistor and the second NMOS transistor are low nominal VDD devices with maximum endurable voltages lower than the power supply voltage. The ESD claim further includes an ESD detection circuit including a capacitor coupled between the power supply node and a gate of the second NMOS transistor, and a resistor coupled between the gate of the second NMOS transistor and the VSS node. |
申请公布号 |
US8059376(B2) |
申请公布日期 |
2011.11.15 |
申请号 |
US20100701996 |
申请日期 |
2010.02.08 |
申请人 |
CHEN KUO-JI;WANG GUANG-CHENG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN KUO-JI;WANG GUANG-CHENG |
分类号 |
H02H9/00;H01C7/12;H02H1/00;H02H1/04;H02H3/22 |
主分类号 |
H02H9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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