发明名称 |
Spin transfer MRAM device with novel magnetic synthetic free layer |
摘要 |
We describe a CPP MTJ MRAM element that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes a tunneling barrier layer of MgO and a non-magnetic CPP layer of Cu or Cr and utilizes a novel synthetic free layer having three ferromagnetic layers mutually exchange coupled in pairwise configurations. The free layer comprises an inner ferromagnetic and two outer ferromagnetic layers, with the inner layer being ferromagnetically exchange coupled to one outer layer and anti-ferromagnetically exchange coupled to the other outer layer. The ferromagnetic coupling is very strong across an ultra-thin layer of Ta, Hf or Zr of thickness preferably less than 0.4 nm. |
申请公布号 |
US8058697(B2) |
申请公布日期 |
2011.11.15 |
申请号 |
US20070728491 |
申请日期 |
2007.03.26 |
申请人 |
GUO YIMIN;HORNG CHENG;TONG RU-YING;MAGIC TECHNOLOGIES, INC. |
发明人 |
GUO YIMIN;HORNG CHENG;TONG RU-YING |
分类号 |
H01L29/82;G11C11/02 |
主分类号 |
H01L29/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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