| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting element which is markedly improved in light extraction efficiency and capable of gaining a good emission intensity, consuming a small electric power. <P>SOLUTION: The light emitting element is equipped with a gallium nitride compound semiconductor layer 1 which contains a light emitting layer 1a and is epitaxially grown, a translucent conductive layer 2 formed on the one main surface 1b1 of the gallium nitride compound semiconductor layer 1, and a conductive layer 3 electrically connected to a layer 1c located on the other main surface 1c1 side of the gallium nitride compound semiconductor layer 1. A board 4 used for epitaxially growing the gallium nitride compound semiconductor layer 1 is removed from the other main surface 1c1 of the gallium nitride compound semiconductor layer 1. A reflecting layer 5 is formed on the other main surface 1c1 of the gallium nitride compound semiconductor layer 1. The reflecting layer 5 is formed on the other main surface 1c1 where the board 4 has been removed, so that the reflecting layer 5 is improved in reflectance so as to improve the one main surface 1b1 in light extraction efficiency. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
